052-6351 rev c 1-2011 symbol parameter APT100GT120JRDL unit v ces collector-emitter voltage 1200 volts v ge gate-emitter voltage 20 i c1 continuous collector current @ t c = 25c 123 amps i c2 continuous collector current @ t c = 100c 67 i cm pulsed collector current 1 200 ssoa switching safe operating area @ t j = 150c 200a @ 1200v p d total power dissipation 570 watts t j , t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063 from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. symbol characteristic / test conditions min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 5ma) 1200 - - volts v ge(th) gate threshold voltage (v ce = v ge , i c = 4ma, t j = 25c) 4.5 5.5 6.5 v ce(on) collector emitter on voltage (v ge = 15v, i c = 100a, t j = 25c) 2.7 3.2 3.7 collector emitter on voltage (v ge = 15v, i c = 100a, t j = 125c) - 4.0 - i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 - - 300 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 - - 1500 i ges gate-emitter leakage current (v ge = 20v) - - 600 na r g(int) integrated gate resistor -5- static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . microsemi website - http://www.microsemi.com s o t - 2 2 7 isotop ? file # e145592 "ul recognized" g e e c 1200v APT100GT120JRDL the thunderbolt igbt ? used in this resonant mode combi is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? of- fers superior ruggedness and ultrafast switching speed. resonant mode igbt ? features low conduction loss low gate charge ultrafast tail current shutoff low forward diode voltage (v f ) ultrasoft recovery diode ssoa rated rohs compliant typical applications induction heating welding medical high power telecom resonant mode phase shifted bridge g c e downloaded from: http:///
052-6351 rev c 1-2011 dynamic characteristic APT100GT120JRDL symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz - 6700 - pf c oes output capacitance - 655 - c res reverse transfer capacitance - 440 - v gep gate-to-emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 100a - 10.0 - v q g total gate charge - 685 - nc q ge gate-emitter charge -7 5 - q gc gate-collector charge - 400 - ssoa switching safe operating area t j = 150c, r g = 1.0 7 , v ge = 15v, l = 100 h, v ce = 1200v 200 a t d(on) turn-on delay time inductive switching (25c) v cc = 800v v ge = 15v i c = 100a r g = 4.7 t j = +25c -5 0 - ns t r current rise time - 100 - t d(off) turn-off delay time - 630 - t f current fall time -3 6 - e on1 turn-on switching energy 4 - tbd - j e on2 turn-on switching energy 5 - 17600 - e off turn-off switching energy 6 - 7240 - t d(on) turn-on delay time inductive switching (125c) v cc = 800v v ge = 15v i c = 100a r g = 4.7 t j = 125c -5 0 - ns t r current rise time - 100 - t d(off) turn-off delay time - 710 - t f current fall time -3 7 - e on1 turn-on switching energy 4 - tbd - j e on2 turn-on switching energy 5 - 22380 - e off turn-off switching energy 6 - 10950 - symbol characteristic / test conditions min typ max unit r jc junction to case (igbt) - - 0.22 c/w r jc junction to case (diode) - - 0.80 w t package weight - 29.2 - g v isolation rms voltage (50-60hz sinusoidal waveform from terminals to mounting base for 1 min.) 2500 - - volts 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages. 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to z a the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance not including gate driver impedance. thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
052-6351 rev c 1-2011 typical performance curves APT100GT120JRDL 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 0 50 100 150 200 250 0 5 10 15 20 25 30 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 16 0 25 50 75 100 125 150 10 12 14 8 6 4 2 0 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 50a i c = 100a i c = 200a i c = 50a i c = 100a i c = 200a 13v 9v 12v 8v 7v 15v i c = 100a t j = 25c v ce = 960v v ce = 600v v ce = 240v t j = 25c t j = -55c v ge = 15v t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) 11v 10v t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 0 20 40 60 80 100 120 25 50 75 100 125 150 downloaded from: http:///
052-6351 rev c 1-2011 typical performance curves APT100GT120JRDL 0 10000 20000 30000 40000 50000 60000 70000 80000 0 25 50 75 100 125 0 20000 40000 60000 80000 100000 120000 140000 160000 0 4 8 12 16 20 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 40 80 120 160 200 0 10000 20000 30000 40000 50000 60000 70000 80000 0 40 80 120 160 200 0 20 40 60 80 100 120 0 40 80 120 160 200 0 50 100 150 200 250 300 350 0 40 80 120 160 200 0 100 200 300 400 500 600 700 800 900 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 0 40 80 120 160 200 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 4.7 l = 100 h v ce = 800v v ge = +15v r g = 4.7 v ce = 800v t j = 25c , or 125c r g = 4.7 l = 100 h v ge = 15v v ce = 800v v ge = +15v r g = 4.7 v ce = 800v v ge = +15v r g = 4.7 r g = 4.7 , l = 100 h, v ce = 800v t j = 125c t j = 25c t j = 125c t j = 25c r g = 4.7 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 200a e off, 200a e on2, 100a e off, 100a e on2, 50a e off, 50a v ce = 800v v ge = +15v t j = 125c e on2, 200a e off, 200a e on2, 100a e off, 100a e on2, 50a e off, 50a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) downloaded from: http:///
052-6351 rev c 1-2011 0 0.05 0. 1 0.15 0. 2 0.25 10 -4 10 -3 10 -2 10 -1 0.1 1 10 0 50 100 150 200 250 0 200 400 600 800 1000 1200 1400 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 typical performance curves APT100GT120JRDL 0 10 20 30 40 0 10 20 30 40 50 60 70 80 90 100 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 4.7 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 75c 100c v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6351 rev c 1-2011 APT100GT120JRDL i c a d.u.t. v ce v cc apt2x31dl120 figure 21, inductive switching test circuit figure 22, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 23, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% a -46.0ns 780.4v b 422ns 34.13v ? 468ns ? 746.3v a -226ns 97.34v b 928ns 0.000v ? 1.15 s ? 97.34v downloaded from: http:///
052-6351 rev c 1-2011 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -4 10 -3 10 -2 10 -1 0.1 1 typical performance curves APT100GT120JRDL static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci? ed. ultrafast soft recovery anti-parallel diode symbol characteristic / test conditions APT100GT120JRDL unit i f(av) maximum average forward current (t c = 50c, duty cycle = 0.5) 60 amps i f(rms) rms forward current (square wave, 50% duty) 90 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 120 symbol characteristic / test conditions min type max unit v f forward voltage i f = 60a 1.6 2.1 volts i f = 120a 2.0 i f = 60a, t j = 125c 1.25 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s , v r = 30v, t j = 25 c - 61 - ns t rr reverse recovery time i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 25 c - 592 - q rr reverse recovery charge - 2694 - nc i rrm maximum reverse recovery current - 9 - amps t rr reverse recovery time i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 125 c - 793 -n s q rr reverse recovery charge - 5744 - nc i rrm maximum reverse recovery current - 13 - amps t rr reverse recovery time i f = 60a, di f /dt = -1000a/ s v r = 800v, t c = 125 c - 286 - ns q rr reverse recovery charge - 6182 -n c i rrm maximum reverse recovery current - 42 - amps z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 24. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
052-6351 rev c 1-2011 typical perfromance curves APT100GT120JRDL 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 0 10 20 30 40 50 60 70 0 200 400 60 800 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 7000 0 200 400 600 800 1000 duty cycle = 0.5 t j = 45c i rrm q rr t rr 60a 30a 60a 30a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 25, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 26, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 29, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) case temperature (c) figure 30, maximum average forward current vs. case temperature i f(av) (a) 0 200 400 600 800 1000 1200 1400 1 10 100 80 0 v r , reverse voltage (v) figure 31, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 800v t j = 125c v r = 800v -di f /dt, current rate of change (a/ s ) figure 27, reverse recovery charge vs. current rate of change -di f /dt, current rate of change (a/ s ) figure 28, reverse recovery current vs. current rate of change t j = 125c v r = 800v 30a 15a 15a 15a 60a downloaded from: http:///
052-6351 rev c 1-2011 APT100GT120JRDL(g) sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. apt10035lll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform figure 32, diode test circuit figure 32, diode reverse recovery waveform and de? nitions dimensions in millimeters and (inches) downloaded from: http:///
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